Suppression of Dynamic Current Leakage in Avalanche <i>S</i>-Diode Switching Circuits
نویسندگان
چکیده
This work investigates the dynamic current leakage of ${S}$ -diode, which is a GaAs-based avalanche switch doped with deep Fe acceptor traps. The has negative effect on superfast switching parameters this unique device, and here we suggest an original way reducing by means circuit design. It shown that additional bias for S-diode in pulse generation forms negatively charged layer iron traps near electron-injecting junction. As result, concentration nonequilibrium electrons goes down, leads to decrease notation="LaTeX">$\sim 3$ -4 times, rise voltage. results were obtained experimental study are approved calculation.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2022
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2021.3130596